Journal Articles

 

  1. P.K. Ajmera, M.A. Littlejohn and J.R. Hauser, "Effects of H2 annealing on high power RF sputtered A1203 films on Si," J. Electrochemical Society, vol. 119, no. 10, pp. 1421-1424, 1972.
  2. P.K. Ajmera and J.R. Hauser, "Ion-implanted photodiode infrared detectors in epitaxial (GaxIn1-x)As," Applied Optics, vol. 14, no. 12, pp. 2905-2910, 1975.
  3. T. Joy, P. Ajmera and W. Strieder, "Effect of thickness on single ply percolation and conductivity," J. Composite Materials, vol. 14, pp. 130-141, 1980.
  4. P.K. Ajmera, "A new approach to estimate casting surface cleanliness," International Cast Metals Journal, vol. 6, pp. 3-8, 1981.
  5. Y.C.R. Kwor and P.K. Ajmera, "Radio frequency deicing of collector rails for AGT systems," Transportation Research Record 882, pp. 1-6, 1982.
  6. P.K. Ajmera, "The use of computer in classroom for undergraduate instruction in physics of electronic devices," Intl. J. Elec. Engr. Educ., 22, pp. 311-322, 1985.
  7. P.K. Ajmera, H.Y. Shin and B. Zamanian, "Vacuum growth of thin films of ZnSnP2," Solar Cells, vol. 21, pp. 291-299, 1987.
  8. H. Shin and P.K. Ajmera, "Characterization of vacuum grown thin films of ZnSnP2," Materials Letters, vol. 5, pp. 211-214, 1987.
  9. Z.G. Ling, P.K. Ajmera, M. Anselment and L.F. DiMauro, "Lifetime measurements in semiconductors by infrared absorption due to pulsed optical excitation," Appl. Phys. Lett., vol. 51, pp. 1445-1447, 1987.
  10. P.K. Ajmera, B. Huner, A.K. Dutta and C.S. Hartley, "Simulation and observation of infrared piezobirefringent images in diametrically compressed semiconductor disks," Applied Optics, vol. 27, pp. 752-757, 1988.
  11. D.P. Norton and P.K. Ajmera, "Spatially selective photochemical vapor deposition of GaAs on synthetic fused silica," App. Phys. Lett., vol. 53, pp. 595-597, 1988.
  12. F. Mehrad and P.K. Ajmera, "Modeling of heterojunction bipolar devices," Microelectronics Journal, vol. 19, pp. 5-16, 1988.
  13. M.R. Madani and P.K. Ajmera, "Low temperature oxidation of silicon," Electronics Lett., vol. 24, pp. 856-857, 1988.
  14. A.K. Dutta, P.K. Ajmera and B. Huner, "Piezo-birefringence effect in GaAs discs subjected to diametrical compression," J. Appl. Phys., vol. 65, pp. 5230-5232, June 1989.
  15. D.P. Norton and P.K. Ajmera, "Mercury-sensitized photochemical vapor deposition of GaAs on quartz," J. Electrochem. Soc., vol. 136, pp. 2371-2376, 1989.
  16. H.Y. Shin and P.K. Ajmera, "Thin films of ZnSnP2: vacuum growth and electrical properties," Materials Letters, vol. 8, pp. 464-467, 1989.
  17. D.P. Norton and P.K. Ajmera, "Preparation and properties of arsenic thin films deposited by mercury-photosensitized chemical vapor deposition," Materials Letters, vol. 9, pp. 41-47, 1989.
  18. D.P. Norton and P.K. Ajmera, "Ultraviolet light-driven epitaxial growth of gallium arsenide at reduced substrate temperatures," J. Electronic Materials, vol. 19, pp. 367-374, 1990.
  19. D.P. Norton and P.K. Ajmera, "Mass spectroscopic study of photolytic decomposition of triethylgallium and arsine," Materials Letters, vol. 9, pp. 321-324, 1990.
  20. R.L. Stockbauer, P. Ajmera, E.D. Poliakoff, B.C. Craft and V. Saile, "A new synchrotron light source at Louisiana State University's Center for Advanced Microstructures and Devices (CAMD)," Nuclear Instruments and Methods in Physics Research (A), vol A291, pp. 505-510, 1990.
  21. R.L. Stockbauer, E.D. Poliakoff, P. Ajmera, B.C. Craft and V. Saile, "Center for Advanced Microstructures and Devices (CAMD) at Louisiana State University," Physica Scripta, vol. 41, pp. 788-792, 1990.
  22. Z.G. Ling and P.K. Ajmera, "Measurement of bulk lifetime and surface recombination velocity by infrared absorption due to pulsed optical excitation," J. Appl. Phys., vol. 69, pp. 519-521, 1991.
  23. A.K. Dutta and P.K. Ajmera, "Simulation and observation of the images of dislocations in (100) silicon using infrared piezobirefringence," J. Appl. Phys., vol.69, pp. 7411-7418, 1991.
  24. M. Madani and P.K. Ajmera, "Application of Nicollian-Reisman model to negative point-to-plane corona oxidation of silicon," Electronics Letters, vol. 27, pp. 1352-1353, 1991.
  25. G.S. Kousik, Z.G. Ling and P.K. Ajmera, "Non-destructive technique to measure bulk lifetime and surface recombination velocities at the two surfaces by infrared absorption due to pulsed optical excitation," J. Appl. Phys., vol. 72, pp. 141-146, 1992.
  26. I. Qureshi, P.K. Ajmera, and S. Felps, "Laser induced photofragment emission spectrum of vapor phase triethylgallium using 193 nm excitation," Materials Letters, vol. 14, pp. 107-111, 1992.
  27. M.R. Madani and P.K. Ajmera, "Characterization of silicon oxide films grown at room temperature by point-to-plane corona discharge," J. Electronic Materials, vol. 22, pp. 1147-1152, 1993.
  28. Z. Ling, P.K. Ajmera and G. Kousik, "Simultaneous Extraction of bulk Lifetime and Surface Recombination Velocities from Free Carrier Absorption Transients," J. Appl. Phys., vol. 75, pp. 2718-2720, 1994.
  29. J. Song, G.S. Lee and P.K. Ajmera, "Low temperature plasma enchanced chemical vapor deposition of silicon oxide films using disilane and nitrous oxide," J. Electronic Mtls., vol. 24, pp. 1507-1510, 1995.
  30. J. Song, G.S. Lee and P.K. Ajmera, "Chemical and electrical characteristics of low temperature plasma enhanced CVD silicon oxide films using Si2H6 and N2O," Thin Solid Films, vol. 270, pp. 512-516, 1995.
  31. J.Song, P.K. Ajmera and G.S. Lee, "Effects of native oxide removal from silicon substrate and annealing on SiO2 films deposited at 120°C by plasma enchanced chemical vapor deposition using dislilane and nitrous oxide," J. Vacc. Sci. & Tech. (B), vol. 14, pp. 727-731, 1996.
  32. J. Song, P.K. Ajmera and G.S. Lee, "High quality fluorinated silicon oxide films prepared by plasma enhanced chemical vapor deposition at 120°C," Appl. Phys. Lett., vol. 69, pp. 1876-1878, 1996.
  33. J. Song, P.K. Ajmera and G.S. Lee, "Low temperature plasma enhanced chemical vapor deposition of fluorinated silicon oxide films as an interlayer dielectric," J. Vacc. Sci. and Tech. (B), vol. 15, pp 1843-1846, 1997.
  34. S. Stadler and P.K. Ajmera, "Stress control in thin sputtered films towards potential application in micromachined structures," Materials Letters, vol. 35, pp 18 -21, 1998.
  35. G. Nallapati and P.K. Ajmera, "Process characterization of plasma enhanced chemical vapor deposition of silicon nitride films with disilane as silicon source," J. Vacc. Sci. and Technol (B), vol.16, pp 1077-1081, 1998.
  36. A. Srivastava, S.V. Prasanna and P.K. Ajmera, "Readout electronics scheme in CMOS technology for integration with analog outputs from integrated smart sensors," J. Intelligent Material Systems and Structures, Vol. 11, pp. 116-124, Feb. 2000.
  37. S. Stadler and P.K. Ajmera, "Integration of LIGA structures with CMOS circuitry," Sensors and Materials, Vol. 14, No. 3, pp. 151-166, 2002.
  38. I. Song and P.K. Ajmera, "Use of a photoresist sacrificial layer with SU-8 electroplating mold in MEMS fabrication," J. Micromechanics & Microengineering, Vol. 13, pp. 816-821, 2003.
  39. C. Zhang, A. Srivastava and P.K. Ajmera, "Low voltage CMOS Schmitt trigger circuits," Electronics Letts., Vol. 35, No. 24, pp. 1696-1698, 2003.
  40. C. Zhang, A. Srivastava and P.K. Ajmera, "Noise analysis of a 0.8 V forward body -bias CMOS op-amp design," Revised 1/31/2004, Special issue on Noise in Devices & Circuits, Fluctuations and Noise Letters, Vol. 4, no. 2, pp. L403-L412, June 2004.
  41. Y. Jin, Y. Desta, J. Goettert, G.S. Lee and P.K. Ajmera, "Surface modification of silicon containing fluorocarbon films prepared by plasma enhanced chemical vapor deposition," Accepted J. Vac. Sci. Tech. A, July/Aug. 2005.